V–I characteristic of a silicon diodeसिलिकॉन डायोड का V–I अभिलक्षणV–I characteristic of a silicon diode
NCERT Fig 14.16 (c) · Class 12 Physics · Chapter 14 · interactive diagram
Read Chapter 14 with this diagramइस डायग्राम के साथ अध्याय 14 पढ़ेंIs diagram ke saath Ch 14 padhiyeAll Physics diagramsसभी भौतिकी डायग्रामSaare Physics diagrams
Parts and what they mean
- Forward characteristic (अग्र अभिलक्षण) — Current stays almost zero until the threshold voltage, then rises steeply (exponentially) — milliamperes.
- Threshold (cut-in) voltage (देहली (कट-इन) वोल्टता) — About 0.7 V for silicon and 0.2 V for germanium diodes.
- Reverse saturation current (उत्क्रम संतृप्त धारा) — Very small (µA) and nearly independent of the reverse voltage: limited by the number of minority carriers, not by the voltage.
- Breakdown voltage Vbr (भंजन वोल्टता Vbr) — At V = Vbr the reverse current rises sharply. If it is not limited below the rated value, the diode is destroyed by overheating. General-purpose diodes are not used beyond the reverse saturation region. (The value −80 V here is only illustrative.)
- Axes and scales (अक्ष और पैमाने) — Forward: volts (0–1 V) and mA. Reverse: tens of volts and µA. The two quadrants have different scales.
Original diagram drawn by Simple Learning Hub, based on NCERT Fig 14.16 (c). Report a mistake